SDD Modules

KETEK’s Silicon Drift Detectors (SDD) are the state-of-the-art X-ray sensors for the energy range between 0.05 keV and 30 keV.
They are globally used in manifold applications in electron microscopes, XRF benchtop and XRF handheld spectrometers as well as in material sorting systems for mining and recycling. Due to their wide operating temperature range, their excellent energy resolution, and high reliability they are particularly suited for industrial applications.

H7

H20

VITUS H50 CL

65 mm² collimated to 47 mm² X-ray Silicon Drift Detector for XRF – EDX – TXRF Applications

Unique Features

Basic module with high count rate capability
New KETEK CSA improves the energy resolution at all peaking times
∆T from 95 K to 130 K depending on heat sink temperature
Power consumption as low as 150 mW possible at 20 °C heat sink and -35 °C chip temperature
Superior radiation hardness up to a total dose of 5×10¹² incoming low energy photons
Both Graphene window types available

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Available in

H50

K50

Available Options

CL Window

Low-energy type
165 nm Carbon with Silicon support grid
86 % open area
Very high 100° acceptance angle (typical Polymer window: 53°)
Vacuum encapsulated for many years of stable operation
No window fluorescence lines (pure Carbon)

Specifications

First amplification stage	KETEK CSA
Energy resolution (@ Mn-K_α, -35 °C chip temperature and 1 µs peaking time)	≤ 129 eV
Peak to background	> 15,000
Peak to tail	> 2,000
Optimal peaking time at max. cooling	1 µs
Absorption depth	450 µm Si
Peak shift stability up to 100 kcps	< 1 eV
Max. input countrate	2,000 kcps
Window	165 nm Carbon with Silicon support grid
Cooling performance at +20°C heat sink temperature	∆T > 95 K
On-chip collimator	multilayer

Spectrum

The spectrum has been acquired in KETEK’s standard end qualification test stand with an Fe-55 source. The input count rate has been 50 kcps at a peaking time of 1 μs. The spectrum shows an excellent energy resolution for Mn-Kα and peak-to-background ratio.

Energy Resolution

Energy resolution (Mn-Kα) values for peaking times from 0.1 μs through 8 μs showing good FWHM values even for higher operating temperatures. Depending on the application the best performance can be achieved by an appropriate selection of peaking time and set operating temperature.

Cooling Performance

NEW SDD COOLING TECHNOLOGY

-60 °C SDD chip temperature achievable even at +65 °C heat sink temperature
Drastically increased efficiency of the thermoelectric cooling (e.g. 200 mW at -35 °C sensor temperature)
Ultra stable vacuum integrity for typically more than 10 years of operation

Operation Requirements

SDD Voltages and Currents

Ring1 (R1)	-20 V ± 5 V	10 μA typ.
RingX (RX)	-130 V ± 20 V	10 μA typ.
Back	-65 V ± 5 V	< 1 nA
Peltier Element	5,5 V	600 mA max.

General Parameters

Temperature Monitor	NTC thermistor	10 kΩ @ 25 °C
Output signal	ramped reset type	–

CSA Parameter

VI/O	3.3 V ± 0.1 V	< 1 mA
Vs	2 V ± 0.1 V	< 1 mA
Vsss	-5 V ± 0.1 V	< 1 mA
Output gain	1.6 mV/keV ± 20 %	–

Pin Assignment

Geometry

Overview VITUS SDD Series

KETEK offers a broad range of high performance Silicon Drift Detectors (SDD) for energy dispersive X-ray spectroscopy. From mature off-the-shelf systems to innovative customized solutions, KETEK provides the right X-ray sensor for your needs across the spectrum of scientific and industrial applications. The VITUS SDD series combined with KETEK’s complete electronics including the pulse processing is a fast and efficient acquisition solution of highest quality.

Overview SDD